Formation of narrow channels using split back-gates defined byin situfocused ion beam lithography
- 1 January 1997
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (1) , 137-139
- https://doi.org/10.1088/0268-1242/12/1/001
Abstract
We have fabricated high electron mobility transistors incorporating split back-gates using the technique of in situ focused ion beam lithography and molecular beam epitaxial regrowth. We show that it is possible to form quasi-ballistic channels by biasing the split back-gate and have succeeded in defining wires of 400 nm width. Application of a small perpendicular magnetic field has allowed us to demonstrate that boundary scattering in these devices is mostly specular, as for conventional structures fabricated with Schottky gates.Keywords
This publication has 9 references indexed in Scilit:
- Fabrication of a novel split-backgate transistor by in situ focused ion-beam lithography and molecular-beam epitaxial regrowthJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Transport properties of a two-dimensional electron gas closely separated from an underlying n+ GaAs layer: The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and in situ focused ion beamsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayerSemiconductor Science and Technology, 1993
- The fabrication of back-gated high electron mobility transistors — a novel approach using MBE regrowth on an in situ ion beam patterned epilayerJournal of Crystal Growth, 1993
- Electrostatics of edge channelsPhysical Review B, 1992
- Boundary scattering in quantum wiresPhysical Review Letters, 1989
- Four-terminal magnetoresistance of a two-dimensional electron-gas constriction in the ballistic regimePhysical Review B, 1988
- Coherent Electron Focussing in a Two-Dimensional Electron GasEurophysics Letters, 1988
- Electron-electron interactions in GaAs-As heterostructuresPhysical Review B, 1986