Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

This publication has 15 references indexed in Scilit:

• Low-threshold continuous-wave operation of an oxide-confinedvertical cavity surface emitting laser based on a quantumdot active region and half-wave cavity
  Electronics Letters, 1997
• Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
  Applied Physics Letters, 1997
• Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser
  Applied Physics Letters, 1996
• Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer
  Electronics Letters, 1996
• Room temperature lasing from InGaAs quantum dots
  Electronics Letters, 1996
• Room-temperature operation of In _0.4 Ga _0.6 As/GaAsself-organised quantum dot lasers
  Electronics Letters, 1996
• Visible luminescence from semiconductor quantum dots in large ensembles
  Applied Physics Letters, 1995
• Low threshold, large T _o injectionlaser emissionfrom (InGa)As quantum dots
  Electronics Letters, 1994
• Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
  Applied Physics Letters, 1990
• Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
  Applied Physics Letters, 1988