Wafer Mapping of Total Dose Failure Thresholds in a Bipolar Recessed Field Oxide Technology
Open Access
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1751-1756
- https://doi.org/10.1109/TNS.1987.4337549
Abstract
Ionizing radiation failure thresholds were measured across a silicon wafer using 10 KeY x-rays to determine the success of hardened process modifications and to examine wafer level hardness assurance screening techniques. Topological wafer maps of the total dose failure response for Signetics 74F00 circuits are presented.Keywords
This publication has 3 references indexed in Scilit:
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- Total Dose Effects in Recessed Oxide Digital Bipolar MicrocircuitsIEEE Transactions on Nuclear Science, 1983