Comparison of 60Co Response and 10 KeV X-Ray Response in MOS Capacitors
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4377-4381
- https://doi.org/10.1109/tns.1983.4333141
Abstract
Recently there has been great practical interest in using low energy (10 keV) x-rays rather than the usual 60Co for radiation testing of microelectronic circuits. In this work we examine some of the mechanisms underlying the radiation response of MOS capacitors in these two environments. Specifically we measure the thickness dependent dose enhancement in thin SiO2 films, and we measure the field dependence of the recombination. We found significant dose enhancement for 10 keV x-rays for thin oxides, and the recombination is generally greater at field of practical interest for 10 keV x-rays than for 60Co. The implications of these results for device testing are discussed.Keywords
This publication has 11 references indexed in Scilit:
- Ionization of SiO2 by Heavy Charged ParticlesIEEE Transactions on Nuclear Science, 1981
- Photon Energy Dependence of Radiation Effects in MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Interface-State Generation in Radiation-Hard OxidesIEEE Transactions on Nuclear Science, 1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray SourcesIEEE Transactions on Nuclear Science, 1980
- Temperature- and Field-Dependent Charge Relaxation in SiO2 Gate InsulatorsIEEE Transactions on Nuclear Science, 1978
- Role Transport and Charge Relaxation in Irradiated SiO2 MOS CapacitorsIEEE Transactions on Nuclear Science, 1975
- Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient AnnealingIEEE Transactions on Nuclear Science, 1975
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Spectrally resolved photo depopulation of electron trapping defects in amorphous silica filmsSolid State Communications, 1970