A two-dimensional analysis of indium phosphide junction field effect transistors with long and short channels
- 1 August 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (8) , 931-939
- https://doi.org/10.1016/0038-1101(73)90100-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A two-dimensional analysis of gallium arsenide junction field effect transistors with long and short channelsSolid-State Electronics, 1972
- Electron transfer in indium phosphideElectronics Letters, 1972
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967