Dynamical properties of excitons in Zn1−xCdxSe/ZnSe quantum wells and Zn1−xCdxSe epilayers grown by molecular beam epitaxy
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 861-867
- https://doi.org/10.1016/0022-0248(94)90921-0
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutionsJournal of Luminescence, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained-layer quantum wellsJournal of Applied Physics, 1991
- Room-temperature exciton absorption in (Zn,Cd)Se/ZnSe quantum wells at blue-green wavelengthsApplied Physics Letters, 1990
- Optical Properties of ZnSe Epilayers and FilmsPhysica Status Solidi (a), 1990
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Acceptor spectra of As-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stressPhysical Review B, 1985
- Binding energy of biexcitons and bound excitons in quantum wellsPhysical Review B, 1983
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982