Abstract
A perturbation theory is developed for the correlation energy Ec[n], of a finite-density system, with respect to the coupling constant α which multiplies the electron-electron repulsion operator in Hα=T^+αV^ee+tsumi vα(ri). The external potential vα is constrained to keep the gound-state density n fixed for all α≥0. vα is given completely in terms of functional derivatives at full charge (α=1), from which Ec[nλ]=ec,2[n]+ λ1 ec,3[n]+λ2 ec,4[n]+..., where each ec,j[n] is expressed in terms of integrals involving Kohn-Sham determinants. Here, nλ(x,y,x)=λ3nxyz) and λ=α1. The identification of limλ Ec[nλ], which is a high-density limit, as the second-order energy ec,2[n] allows one to compute bounds upon limλ Ec[nλ]; the bounds imply that limλ Ec[nλ]≃Ec[n] for a large class of small atoms and molecules, and suggest that limλ Ec[nλ] should be of the same order of magnitude as Ec[n] in finite insulators and semiconductors.