Comparative studies of the surface reactivity of triethylgallium on semiconductor and dielectric surfaces
- 1 November 1991
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 3 (S) , S173-S178
- https://doi.org/10.1088/0953-8984/3/s/028
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100)Surface Science, 1990
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- The decomposition of triethylgallium on Si(100)Journal of Vacuum Science & Technology B, 1989
- Surface organometallic chemistry in the chemical vapor deposition of aluminum films using triisobutylaluminum: .beta.-hydride and .beta.-alkyl elimination reactions of surface alkyl intermediatesJournal of the American Chemical Society, 1989