Feeding-in and blocking processes of MeV protons transmitted through silicon single crystals
- 1 February 1976
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 132, 163-167
- https://doi.org/10.1016/0029-554x(76)90730-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Multiple Scattering and Planar Dechanneling in Silicon and GermaniumPhysical Review B, 1973
- Axial- to Planar-Channeling TransitionPhysical Review B, 1973
- Dechanneling of 5 MeV Protons from planar channels in silicon and its temperature dependenceRadiation Effects, 1973
- Lindhard's multiple scattering description justifies axial and planar dechannelling dataRadiation Effects, 1972
- Electrochemically Thinned N/N+ Epitaxial Silicon—Method and ApplicationsJournal of the Electrochemical Society, 1971
- Interpretation of emergent star pattern distributions for MeV protons transmitted through single crystalsRadiation Effects, 1969
- Proton channelling through thin crystalsPhilosophical Magazine, 1968
- Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single CrystalsPhysical Review B, 1967