Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A) , L818
- https://doi.org/10.1143/jjap.24.l818
Abstract
Dislocation propagation under a misfit dislocation generation condition into an MBE grown GaAs layer from a nearly dislocation-free indium-doped substrate and the epi-layer/substrate interface is investigated. Thermally stress-induced substrate dislocations of 60°-type lying on {111} planes are usually forced to bend at the interface. However, grown-in substrate dislocations with composite Burgers vectors, which are propagated from a seed-crystal, are not forced and penetrate into the epi-layer. Moreover, dislocations independent of substrate dislocations emerge in the epi-layer from the interface.Keywords
This publication has 3 references indexed in Scilit:
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