p-n-p-n optical detectors and light-emitting diodes
- 1 November 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 14 (11) , 810-813
- https://doi.org/10.1109/jqe.1978.1069709
Abstract
Light-emitting diodes with the high-radiance Burrus configuration have been made with an internal p-n-p-n structure which causes anS-type negative resistance. The devices were double heterostructures using InGaAsP material. By using the proper external load impedance and bias voltage, the negative resistance can be used to obtain bistable operation with switching from low current to high current triggered by a small current (e.g., 1 μA). Light coupled into the center junction can be used as the source of signal current. Since light output is proportional to the total current, this type of device can be used as a light-signal repeater.Keywords
This publication has 5 references indexed in Scilit:
- Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μmElectronics Letters, 1977
- Barrier-controlled low-threshold p n p n GaAs heterostructure laserApplied Physics Letters, 1977
- Optically-switched PNPN light-emitting diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Multilayer GaAs injection laserIEEE Journal of Quantum Electronics, 1968
- A Light-Activated Semiconductor SwitchJournal of Applied Physics, 1967