Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

This publication has 11 references indexed in Scilit:

• Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
  Applied Physics Letters, 1998
• Electrical characterization of n-GaN Schottky and PCVD-SiO2/n-GaN interfaces
  Journal of Crystal Growth, 1998
• High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
  Electronics Letters, 1998
• AlN/GaN insulated gate heterostructure FET withregrown n ⁺ GaN ohmic contact
  Electronics Letters, 1998
• High power applications for GaN-based devices
  Solid-State Electronics, 1997
• Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
  Applied Physics Letters, 1997
• Low interface trap density for remote plasma deposited SiO2 on n-type GaN
  Applied Physics Letters, 1996
• Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
  Applied Physics Letters, 1994
• Measurement of n-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniques
  Journal of Applied Physics, 1994
• Metal semiconductor field effect transistor based on single crystal GaN
  Applied Physics Letters, 1993