Photovoltaic properties of Cu2Se-AgInSe2 heterojunctions
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (2) , 619-620
- https://doi.org/10.1063/1.322623
Abstract
p‐type Cu2Se/n‐type AgInSe2 heterodiodes were fabricated by annealing Cu‐plated AgInSe2 samples in Se at temperatures between 200 and 500°C. When operated as photovoltaic detectors, the diodes exhibit a peak quantum efficiency of 0.18 near 1.15 μ.This publication has 6 references indexed in Scilit:
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