Electrical properties of AgInSe2
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (12) , 5367-5370
- https://doi.org/10.1063/1.1663244
Abstract
The temperature dependence of the electrical properties of a series of widely varying conductivity crystals of AgInSe2 is presented. The room‐temperature electron concentration can be varied from greater than 1018 cm−3 to less than 1012 cm−3. The room‐temperature carrier concentration can be reduced below ∼1017 cm−3 by annealing in Se, which however produces undesirable effects on the electron mobility. The conductivity is dominated by shallow donors (binding energy less than 20 meV) which are probably extrinsic impurities.This publication has 11 references indexed in Scilit:
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