Stress in sputtered TaSix films on polycrystalline silicon
- 1 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9) , 863-865
- https://doi.org/10.1063/1.94959
Abstract
Stress in TaSix/polycrystalline silicon structures has been examined as a function of film composition, annealing conditions, and deposition parameters. It was found that although stress in as‐deposited films is a strong function of these variables, annealed films exhibit a large tensile stress nearly independent of the parameters studied.Keywords
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