Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures
- 30 November 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 134 (1-3) , 323-326
- https://doi.org/10.1016/0378-4363(85)90364-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Impurity and Landau-level electron lifetimes inn-type GaAsPhysical Review B, 1985
- Resonant polarons in a GaAs-GaAlAs heterostructureSolid State Communications, 1985
- Effects of electron heating on the two-dimensional magnetotransport in AlGaAs/GaAs heterostructuresSurface Science, 1984
- Nonlinear Far-Infrared Magnetoabsorption and Optically Detected Magnetoimpurity Effect in-GaAsPhysical Review Letters, 1983
- Determination of the phonon modes involved in the carrier-phonon interaction in silicon inversion layers at low temperatures by nonohmic transport measurementsPhysical Review B, 1980
- Landau-Level-Electron Lifetimes in-InSbPhysical Review Letters, 1978
- Warm and hot carriers in silicon surface-inversion layersPhysical Review B, 1974
- Low-Temperature Non-Ohmic Galvanomagnetic Effects in Degenerate-Type InAsPhysical Review B, 1972