The growth of diffusion doped ZnSe: Te epilayers by atmospheric pressure metalorganic chemical vapour deposition
- 2 January 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 126 (2-3) , 179-183
- https://doi.org/10.1016/0022-0248(93)90024-q
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Interpretation of the temperature-dependent behaviour of the emission from isoelectronic tellurium centres in epitaxial ZnSe1-xTexSemiconductor Science and Technology, 1992
- Atmospheric pressure metalorganic chemical vapour deposition growth and optical studies of ZnSe1−xTex thin film alloysJournal of Crystal Growth, 1992
- MOCVD Layer growth of ZnSe and ZnS / ZnSe multiple layers using nitrogen containing adducts of dimethylzincJournal of Crystal Growth, 1990
- The MOCVD growth without prereaction of ZnSe and ZnS layersJournal of Crystal Growth, 1989
- Excitonic transitions in ZnSe epilayers grown on GaAsPhysical Review B, 1988
- Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructuresJournal of Crystal Growth, 1986
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth of semi-insulating epitaxial gallium arsenide by chromium doping in the metal-alkyl+hydride systemJournal of Crystal Growth, 1978
- Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloysJournal of Luminescence, 1970