InP/InGaAs HBT phototransistor as optoelectronic converter up to millimetre-wave bands
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A fiber optic/millimeter-wave radio transmission link using HBT as direct photodetector and an optoelectronic upconverterIEEE Transactions on Microwave Theory and Techniques, 1996
- High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflectorIEEE Journal of Quantum Electronics, 1994
- Optically-biased, edge-coupled InP/InGaAs heterojunction phototransistorsElectronics Letters, 1993
- Comparison of InGaAs transistors as optoelectronic mixersElectronics Letters, 1993
- Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminalIEEE Electron Device Letters, 1991