Si-TaSi2 i n s i t u junction eutectic composite diodes
- 15 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (24) , 1656-1658
- https://doi.org/10.1063/1.97622
Abstract
Nearly ideal diodes have been fabricated using the in situ junctions present in Si‐TaSi2 semiconductor‐metal eutectic composites. The composites, prepared by directional solidification at the eutectic composition, have a high density of TaSi2 rods in a quasi‐single crystalline P‐doped, n‐type Si matrix. Analysis of the diodes using current‐voltage and capacitance‐voltage techniques yields a TaSi2/Si Schottky barrier height of 0.62 eV and evidence that the voltage‐dependent depletion zones can be made comparable to the interrod spacing to produce a ‘‘pinch‐off’’ condition.Keywords
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