Direct Silicidation of Co on Si by Rapid Thermal Annealing
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Control of titanium-silicon and silicon dioxide reactions by low-temperature rapid thermal annealingApplied Physics Letters, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Cobalt disilicide: Crystal growth and physical propertiesJournal of Crystal Growth, 1984
- Electrical transport properties of CoSi2 and NiSi2 thin filmsApplied Physics Letters, 1984
- A direct measurement of interfacial contact resistanceIEEE Electron Device Letters, 1982
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980