Control of titanium-silicon and silicon dioxide reactions by low-temperature rapid thermal annealing
- 15 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1080-1082
- https://doi.org/10.1063/1.96386
Abstract
Auger electron spectroscopy/depth profiling measurements demonstrate that titanium silicide forms between titanium and silicon dioxide at conventional annealing temperatures. Low-temperature rapid thermal annealing provides a process window in time and temperature to suppress this parasitic reaction relative to silicide formation at titanium-silicon interfaces within the same thin-film structure.Keywords
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