Formation of titanium silicides by fast radiative processing
- 1 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5) , 527-528
- https://doi.org/10.1063/1.95302
Abstract
Titanium silicide films were grown under roughing vacuum on single crystal silicon wafers using high power quartz-halogen tungsten lamps to provide the thermal driving force. After processing for various time intervals, ranging from 5 to 25 s, the samples were characterized by measuring their sheet resistance. Major phases were detected with x-ray diffractometry. Elemental composition and film thickness were measured using Rutherford backscattering and Auger electron spectroscopy. These techniques consistently indicated that silicide formation was completed after 10–12 seconds processing time. The quality of these films and its potential usefulness are evidenced by their low resistivity of 21 μΩ cm.Keywords
This publication has 11 references indexed in Scilit:
- Transient enhanced diffusion in arsenic-implanted short time annealed siliconApplied Physics Letters, 1984
- Rapid isothermal annealing of boron ion implanted junctionsJournal of Applied Physics, 1983
- Formation of titanium silicide films by rapid thermal processingIEEE Electron Device Letters, 1983
- Infrared rapid thermal annealing for GaAs device fabricationJournal of Applied Physics, 1983
- Electrical properties of S implants in GaAs activated by infrared rapid thermal annealingJournal of Applied Physics, 1983
- Ion implantation damage and annealing in germaniumJournal of Applied Physics, 1983
- Pulsed thermal annealing of ion-implanted siliconJournal of Applied Physics, 1983
- Short Time AnnealingJournal of the Electrochemical Society, 1983
- Processing of titanium films on silicon using a multiscanned electron beamElectronics Letters, 1982
- Single-crystal Si films on SiO2 prepared by using a stationary graphite heater for lateral epitaxy by seeded solidificationApplied Physics Letters, 1981