Electron spin resonance of doped glow‐discharge amorphous germanium
- 1 January 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 115 (1) , 141-151
- https://doi.org/10.1002/pssb.2221150116
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge DecompositionJapanese Journal of Applied Physics, 1981
- ESR studies on sputtered amorphous SiC, SiGe and GeC filmsSolid State Communications, 1981
- Effect of compensation and correlation on conduction near the metal non-metal transitionPhilosophical Magazine Part B, 1980
- Electronic transport and photoconductivity in phosphorus-doped amorphous germaniumPhilosophical Magazine Part B, 1979
- EPR study on amorphous germanium oxygen, deposition angle, annealing, and substrate temperature effectsPhysica Status Solidi (b), 1976
- Antiferromagnetic interactions between localized states in amorphous germaniumSolid State Communications, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin ResonancePhysical Review B, 1973
- Electron paramagnetic resonance and the ageing process in amorphous germaniumThin Solid Films, 1971
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969