Using Rapid Thermal Processing to Induce Epitaxial Alignment of Polycrystalline Silicon Films on (100) Silicon
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Grain‐Growth Mechanisms in PolysiliconJournal of the Electrochemical Society, 1982
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979