Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage
- 1 September 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (5) , 2523-2526
- https://doi.org/10.1116/1.1289550
Abstract
In this article, a thin tensile GaAs interlayer was used to get narrower size distribution and regular arrangement of InAs quantum dots (QDs) on InP substrate by low-pressure metalorganic chemical vapor deposition. The comparison results of the photoluminescence spectrum and the atomic force microscopy image show better properties after using GaAs interlayer. Also investigated were the surface behaviors of InAs QDs with different InAs coverage on GaAs/InP in order to reveal the detailed information of InAs QDs.Keywords
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