Reply to ’’Comment on ’Simulation of high-field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band-structure dependent transport and impact ionization in GaAs’ ’’
- 1 April 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3327-3329
- https://doi.org/10.1063/1.330994
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Comment on ’’Simulation of high-field transport in GaAs using a Monte Carlo method and pseudopotential band structures’’ and on ’’Band-structure dependent transport and impact ionization in GaAs’’Journal of Applied Physics, 1982
- Comment on "Effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices"IEEE Electron Device Letters, 1981
- The effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devicesIEEE Electron Device Letters, 1981
- Band-structure-dependent transport and impact ionization in GaAsPhysical Review B, 1981
- Simulation of high-field transport in GaAs using a Monte Carlo method and pseudopotential band structuresApplied Physics Letters, 1981
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980
- Hot electron dynamics in GaAs avalanche devices: Competition between ballistic behavior and intervalley scatteringSolid-State Electronics, 1979
- The band structure dependence of impact ionization by hot carriers in semiconductors: GaAsSolid-State Electronics, 1978
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961