Evolution of leakage paths in HfO2∕SiO2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy
- 3 February 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (6) , 063510
- https://doi.org/10.1063/1.1862779
Abstract
A conducting atomic force microscopy (C-AFM) in ultrahigh vacuum (UHV) is used to directly observe the evolution of leakage path in stacked gate dielectrics. Thanks to the UHV environment, reproducible results for both positive and negative tip biases are obtained without material formation on the surface, which has been a problem for atmospheric C-AFM. It is found that the density of leakage spots increases exponentially as a function of tip bias and that it is a large factor for leakage current increase.
Keywords
This publication has 11 references indexed in Scilit:
- Local Leakage Current of HfO2Thin Films Characterized by Conducting Atomic Force MicroscopyJapanese Journal of Applied Physics, 2003
- Characterization of silicon gate oxides by conducting atomic force microscopySurface and Interface Analysis, 2002
- Local electrical characteristics of ultra-thin SiO2 films formed on Si(Surface Science, 2001
- Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopyApplied Physics Letters, 2001
- Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2Applied Physics Letters, 1998
- Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopyApplied Physics Letters, 1998
- Investigation of existing defects and defect generation in device-grade SiO2 by ballistic electron emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stressJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Nanometer-Scale Creation and Characterization of Trapped Charge in SiFilms Using Ballistic Electron Emission MicroscopyPhysical Review Letters, 1996
- Conducting atomic force microscopy study of silicon dioxide breakdownJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995