Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2
- 23 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (21) , 3114-3116
- https://doi.org/10.1063/1.122690
Abstract
In this work, we demonstrate the applicability of conducting atomic force microscopy (AFM) for the quantitative electrical characterization of thin (3–40 nm) SiO2 films on a nanometer scale length. Fowler–Nordheim (F–N) tunneling currents on the order of 0.02–1 pA are measured simultaneously with the oxide surface topography by applying a voltage between the AFM tip and the silicon substrate. Current variations in the F–N current images are correlated to local variations of the oxide thickness on the order of several angströms to nanometers. From the microscopic current–voltage characteristics the local oxide thickness can be obtained with an accuracy of ±0.3 nm. Local oxide thinning of up to 3.3 nm was found at the edge between gate oxide and field oxide of a metal-oxide-semiconductor capacitor with a 20-nm-thick gate oxide.Keywords
This publication has 10 references indexed in Scilit:
- Investigation of existing defects and defect generation in device-grade SiO2 by ballistic electron emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Ballistic-electron emission microscopy studies of charge trapping in SiO2Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Direct imaging of SiO2 thickness variation on Si using modified atomic force microscopeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- High resolution Fowler-Nordheim field emission maps of thin silicon oxide layersApplied Physics Letters, 1996
- Conducting atomic force microscopy study of silicon dioxide breakdownJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling MicroscopeJapanese Journal of Applied Physics, 1995
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- Spatial location of electron trapping defects on silicon by scanning tunneling microscopyApplied Physics Letters, 1986
- Steady-State Gain of Stimulated Brillouin Scattering in LiquidsJournal of Applied Physics, 1969
- Electron emission in intense electric fieldsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928