Two-step oxidation processes in silicon
- 31 August 1986
- journal article
- Published by Elsevier in Materials Letters
- Vol. 4 (8-9) , 337-342
- https://doi.org/10.1016/0167-577x(86)90065-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A Novel Method for Growing Thin Gate OxideJournal of the Electrochemical Society, 1985
- A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin OxidesJournal of the Electrochemical Society, 1985
- Si/SiO2 interface roughness: Structural observations and electrical consequencesApplied Physics Letters, 1985
- Rapid thermal processing of thin gate dielectrics. Oxidation of siliconIEEE Electron Device Letters, 1985
- High resolution measurement of the step distribution at the Si/SiO2 interfaceJournal of Vacuum Science & Technology B, 1984
- Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunnelingJournal of Applied Physics, 1982
- The Growth and Characterization of Very Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1980
- A Method of Forming Thin and Highly Reliable Gate Oxides: Two Step OxidationJournal of the Electrochemical Society, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Optical Evidence for a Silicon‐Silicon Oxide InterlayerJournal of the Electrochemical Society, 1979