Effects of Screening and Neutral Impurity on Mobility in Silicon Inversion Layers under Uniaxial Stress
- 1 January 1979
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 46 (1) , 114-122
- https://doi.org/10.1143/jpsj.46.114
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Surface and bulk impurity eigenvalues in the shallow donor impurity theorySurface Science, 1967