Model for the anomalous off-current of polysilicon thin-film transistors and diodes
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (5) , 938-943
- https://doi.org/10.1109/16.210202
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Poly-crystalline silicon thin film devices for large area electronicsMicroelectronic Engineering, 1991
- Low Thermal Budget Poly-Si Thin Film Transistors on GlassJapanese Journal of Applied Physics, 1991
- Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFTIEEE Electron Device Letters, 1989
- The Origin of the Anomalous Off-current in SOI-TransistorsPublished by Springer Nature ,1989
- A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Subthreshold model of a polycrystalline silicon thin-film field-effect transistorApplied Physics Letters, 1987
- Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET'sIEEE Transactions on Electron Devices, 1986
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985
- Hopping in Exponential Band TailsPhysical Review Letters, 1985