Deep centers and electroluminescence in 4HSiC diodes with a p-type base region
- 1 January 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 29 (1-3) , 181-184
- https://doi.org/10.1016/0921-5107(94)04035-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor depositionApplied Physics Letters, 1994
- Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiCApplied Physics Letters, 1993
- Electrical and optical characterization of SiCPhysica B: Condensed Matter, 1993
- Boron-related deep centers in 6H-SiCApplied Physics A, 1990
- Site effect on the impurity levels in,, andSiCPhysical Review B, 1980
- Free exciton luminescence in 3C, 4H, 6H, and 15R SiCPhysica Status Solidi (a), 1980
- Photoluminescence Due to Al, Ga, and B Acceptors in 4H‐, 6H‐, and 3 C ‐ SiC Grown from a Si MeltJournal of the Electrochemical Society, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974