Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures
- 1 January 1988
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (1) , 53-56
- https://doi.org/10.1007/bf02652233
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Destruction mechanism of III-V compound quantum well structures due to impurity diffusionJournal of Applied Physics, 1987
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasersJournal of Applied Physics, 1985
- Photoluminescence and stimulated emission in Si- and Ge-disordered AlxGa1−xAs-GaAs superlatticesJournal of Applied Physics, 1985
- Donor-induced disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum-well lasersJournal of Applied Physics, 1985
- Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laserApplied Physics Letters, 1985
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Reduced Cu-Cr mixing and reduced Pt-Cu interdiffusion by oxygen in Cu/Cr and Pt/Cu/Cr thin filmsJournal of Applied Physics, 1982
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981