Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laser
- 1 May 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 857-859
- https://doi.org/10.1063/1.95864
Abstract
Continuous room‐temperature operation of impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers is described. Silicon (donor) diffusion at 850 °C is used to produce layer disordering and index guiding, in addition to providing carrier confinement in a ten‐stripe coupled array (8‐μm‐wide stripes on 10‐μm centers).Keywords
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