Effect of Baking Temperature on Purity of LPE Ga0.47In0.53As
- 1 November 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (11)
- https://doi.org/10.1143/jjap.20.2105
Abstract
Liquid phase epitaxy (LPE) and the properties of high purity GaInAs layers on (100)InP substrates are reported. Low carrier concentration (3.8–5.4×1014 cm-3) and high electron mobility (47000–51000 cm2/V.s at 77 K) were obtained reproducibly. The influence of source Ga-In-As melt baking temperatures on the epitaxial layer purity was investigated. The results of a photoluminescence study and van der Pauw measurements show that acceptor impurities as well as donor impurities can be excluded from the source solution by a suitable heat treatment.Keywords
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