Deposition of SiO2 in integrated distributed electron cyclotron resonance microwave reactor
- 1 March 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 296 (1-2) , 66-68
- https://doi.org/10.1016/s0040-6090(96)09380-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Chemical vapor deposition in high-density low-pressure plasmas: reactor scale-up and performanceThin Solid Films, 1994
- Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactorJournal of Vacuum Science & Technology A, 1993
- Transformer coupled plasma etch technology for the fabrication of subhalf micron structuresJournal of Vacuum Science & Technology A, 1993
- Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor DepositionJournal of the Electrochemical Society, 1992