Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
- 1 May 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (5R) , 771-774
- https://doi.org/10.1143/jjap.22.771
Abstract
The diffusion of impurities in glow-discharged hydrogenated amorphous silicon (a-Si: H) films with various hydrogen contents is studied experimentally taking boron and antimony as examples of impurities. Similar impurity diffusion in hydro-fluorinated amorphous silicon (a-Si: F: H) films is also studied for comparison. It is found that the diffusion constant of impurities in a-Si: H depends only weakly on the impurity itself and is equal to the diffusion constant of hydrogen, and that the impurity diffusion is suppressed in a-Si: F: H film.Keywords
This publication has 4 references indexed in Scilit:
- Behaviour of Laser-Produced Plasma in a Uniform Magnetic Field–Plasma InstabilitiesJapanese Journal of Applied Physics, 1981
- Microstructure of plasma-deposited a-Si : H filmsApplied Physics Letters, 1979
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972