Temperature dependence of 1/f noise in thin bismuth films
- 1 March 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (5) , 1353-1358
- https://doi.org/10.1063/1.333224
Abstract
We have measured the 1/f noise in thin bismuth films in the temperature range of 80–300 K. The experimental results are described in terms of mobility fluctuations. The influence of several scattering mechanisms on the noise is discussed.This publication has 22 references indexed in Scilit:
- Temperature dependence of concentrations and mobilities in thin bismuth filmsThin Solid Films, 1983
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Concentration, mobility and 1/f noise of electrons and holes in thin bismuth filmsThin Solid Films, 1980
- Boundary scattering and 1/f noiseJournal of Applied Physics, 1979
- Lattice scattering causes 1/ƒ noisePhysics Letters A, 1978
- Concentration and mobility of charge carriers in thin polycrystalline films of bismuthThin Solid Films, 1978
- Thickness dependence of the current carrier concentration in bismuth filmsThin Solid Films, 1976
- Thermoelectric power in bismuth thin filmsPhysica Status Solidi (a), 1974
- Electrical Transport Properties of Thin Bismuth FilmsPhysical Review B, 1971
- The conductivity of thin metallic films according to the electron theory of metalsMathematical Proceedings of the Cambridge Philosophical Society, 1938