A dual-band CMOS front-end with two gain modes for wireless LAN applications
- 25 October 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 39 (11) , 2069-2073
- https://doi.org/10.1109/jssc.2004.835812
Abstract
A dual-band front-end with two gain modes operating at the 2.4 Industrial Scientific and Medical (ISM) band and 5.15-GHz Unlicensed National Information Infrastructure (UNII) band has been demonstrated in a 0.18-/spl mu/m foundry CMOS process. The front-end uses a single set of RF blocks. A dual-band low noise amplifier (LNA) with two inputs is tuned to the two resonant frequencies by controlling the voltage on a switched resonator. The same switched resonator is also used to switch the LNA between high-gain and low-gain modes. In the 2.4-GHz high-gain mode, the front-end exhibits 39.8-dB maximum voltage gain, 1.5-dB double-side-band (DSB) noise figure, and -12.7-dBm input-referred IP/sub 3/ (IIP/sub 3/) while consuming 24 mW from a 1.8-V supply. In the 5.15-GHz high-gain mode, the front-end achieves 29.2-dB maximum voltage gain, 4.1-dB DSB noise figure and -4.1-dBm IIP/sub 3/ with 41-mW power consumption. The gains can be switched by 7 dB at 5.15 GHz and by 17 dB at 2.4 GHz.Keywords
This publication has 10 references indexed in Scilit:
- A single-chip quad-band [850/900/1800/1900MHz] direct conversion GSM/GPRS RF transceiver with integrated VCOs and fractional-N synthesizerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- An RF CMOS transmitter integrating a power amplifier and a transmit/receive switch for 802.11b wireless local area network applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning rangeIEEE Microwave and Wireless Components Letters, 2003
- 5.8-GHz CMOS T/R switches with high and low substrate resistances in a 0.18-μm CMOS processIEEE Microwave and Wireless Components Letters, 2003
- A 1.5 V, 1.5 GHz CMOS low noise amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A comparison of CMOS and SiGe LNA's and mixers for wireless LAN applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Concurrent dual-band CMOS low noise amplifiers and receiver architecturesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A noise optimization technique for integrated low-noise amplifiersIEEE Journal of Solid-State Circuits, 2002
- A dual-band RF front-end for WCDMA and GSM applicationsIEEE Journal of Solid-State Circuits, 2001
- 3 V low noise amplifier implemented using a 0.8µm CMOS process with three metal layers for 900 MHz operationElectronics Letters, 1996