5.8-GHz CMOS T/R switches with high and low substrate resistances in a 0.18-μm CMOS process
- 14 January 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 13 (1) , 1-3
- https://doi.org/10.1109/lmwc.2002.807698
Abstract
Two single-pole, double-throw transmit/receive switches were designed and fabricated with different substrate resistances using a 0.18-/spl mu/m p/sup $/substrate CMOS process. The switch with low substrate resistances exhibits 0.8-dB insertion loss and 17-dBm P/sub 1dB/ at 5.825 GHz, whereas the switch with high substrate resistances has 1-dB insertion loss and 18-dBm P/sub 1dB/. These results suggest that the optimal insertion loss can be achieved with low substrate resistances and 5.8-GHz T/R switches with excellent insertion loss and reasonable power handling capability can be implemented in a 0.18-/spl mu/m CMOS process.Keywords
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