Effects of substrate resistances on LNA performance and a bondpad structure for reducing the effects in a silicon bipolar technology
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 34 (9) , 1339-1344
- https://doi.org/10.1109/4.782095
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling substrate effects in the design of high-speed Si-bipolar ICsIEEE Journal of Solid-State Circuits, 1996
- A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiverIEEE Journal of Solid-State Circuits, 1996
- Verification techniques for substrate coupling and their application to mixed-signal IC designIEEE Journal of Solid-State Circuits, 1996
- Modeling and analysis of substrate coupling in integrated circuitsIEEE Journal of Solid-State Circuits, 1996
- A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applicationsIEEE Transactions on Electron Devices, 1995