Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 8 (1) , 10-12
- https://doi.org/10.1109/75.650972
Abstract
No abstract availableKeywords
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- A 140-GHz monolithic low noise amplifierIEEE Microwave and Guided Wave Letters, 1995
- V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT'sIEEE Transactions on Microwave Theory and Techniques, 1993