Theory of deep impurity levels in CuCl
- 15 January 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (2) , 1205-1213
- https://doi.org/10.1103/physrevb.25.1205
Abstract
The theory of deep impurity levels is extended to semiconductors with electrons. The major chemical trends are predicted for a large number of substitutional impurities in CuCl. Deep levels are found for S and Se impurities on the Cl site, but not for Ag or Au on the Cu site, in agreement with experiment. The theory also predicts no deep level for isolated O on the Cl site, thus supporting the conclusion that the observed O-related defect is not a simple substitutional impurity.
Keywords
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