High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)

26 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 297-300
https://doi.org/10.1109/iedm.2002.1175837

Abstract

The Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQW) are placed between the base and collector of Si/SiGe heterojunction bipolar transistors as light absorbing layers. The phototransistor with high responsivity and bandwidth at 850 nm is demonstrated. Efficient near infrared (1,310 nm) photoresponse also achieved in this device. The results indicate the Si/SiGe phototransistor is suitable for front-end photoreceivers in the high-speed optical communication applications.

Keywords

SILICON GERMANIUM
GERMANIUM SILICON ALLOYS
PHOTOTRANSISTORS
BANDWIDTH
PHOTOCONDUCTIVITY
ABSORPTION
QUANTUM WELL DEVICES
HETEROJUNCTION BIPOLAR TRANSISTORS
CHARGE CARRIER PROCESSES
PHOTODIODES

This publication has 1 reference indexed in Scilit:

Integration of waveguides and photodetectors in SiGe for 1.3 /spl mu/m operation
IEEE Photonics Technology Letters, 1994