New Approach to Growth of High-Quality GaAs Layers on Si Substrates
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxyJournal of Applied Physics, 1988
- New approach to growth of high-quality GaAs layers on Si substratesApplied Physics Letters, 1987
- Effect of substrate surface structure on nucleation of GaAs on Si(100)Applied Physics Letters, 1987
- Epitaxy Of GaAs on Si: MBE and OMCVDMRS Proceedings, 1987
- Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBEMRS Proceedings, 1987
- The Nucleation and Growth of GaAs on SiMRS Proceedings, 1987
- Structural Characterization of Thin, Low Temperature Films of GaAs on Si SubstratesMRS Proceedings, 1987
- The Two-Step Growth Mechanism of MOCVD GaAs/SiMRS Proceedings, 1987
- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974