Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers
- 1 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (5) , 562-564
- https://doi.org/10.1063/1.94803
Abstract
High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrode. These junctions have excellent characteristics for device applications: values of Vm (the product of the critical current and the subgap resistance measured at 2 mV and 4.2 K) ranging between 35–48 mV, ideal threshold curves, a steep current rise at the gap voltage, and Josephson current densities from 100 to 1100 A/cm2.Keywords
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