Coherent Si growth on GaAs substrates by vapor phase deposition
- 23 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4) , 347-349
- https://doi.org/10.1063/1.100965
Abstract
Epitaxial Si layers with low dislocation density were grown on GaAs substrates by pyrolysis using disilane. The dislocation density evaluated from SECCO etching (HF:H2 SO4 :K2 Cr2 O7 =100 cc:50 cc:2g) was less than 104/cm2, which is lower by two orders of magnitude than that of the GaAs layer on Si substrates. We found that the electron mobility of Si layers on GaAs substrates could be raised by decreasing the growth rate and a high mobility value the same as that of a homoepitaxial layer was obtained, although the Si layers were contaminated by an arsenic impurity of 1018 cm−3 .Keywords
This publication has 7 references indexed in Scilit:
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1987
- Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substratesApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Growth of high quality GaAs layers on Si substrates by MOCVDJournal of Crystal Growth, 1986
- Magnesium doping of (Al,Ga)As in metalorganic chemical vapor depositionJournal of Applied Physics, 1986
- Silicon molecular beam epitaxy on gallium arsenideApplied Physics Letters, 1985