Radiation induced interface states in metal-aluminosilicate (Al2O3⋅SiO2) insulator-Si capacitors
- 7 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (23) , 1937-1939
- https://doi.org/10.1063/1.98306
Abstract
Aluminosilicate (Al2O3⋅SiO2) thin films were prepared on a (100) Si wafer by pyrolysis of Al(CH3)3, SiH4, and N2O gases at the deposition temperature of 850 °C. From the high‐frequency and the quasi‐static capacitance‐voltage measurements, the initial interface state densities of capacitors with Al2O3⋅SiO2 gate insulators were 1.3–2.2×1011 cm−2 eV−1, and hysteresis characteristics were not present. Distribution of interface states of Al2O3⋅SiO2/Si was different from that of SiO2/Si. Even after exposure to 1×105 rads (Si) of Co60 γ‐ray irradiation, the interface states were not affected. The interface state density showed a slight increase after exposure to 1×106 rads.Keywords
This publication has 10 references indexed in Scilit:
- Growth and properties of Si films on sapphire with predeposited amorphous Si layersJournal of Applied Physics, 1986
- Charge character of interface traps at the Si-SiO2 interfaceApplied Physics Letters, 1986
- Electronic traps and P b centers at the Si/SiO2 interface: Band-gap energy distributionJournal of Applied Physics, 1984
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- Fault-free silicon at the silicon/sapphire interfaceApplied Physics Letters, 1982
- Theory of continuously distributed trap states at Si-SiO2 interfacesJournal of Applied Physics, 1981
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitorsApplied Physics Letters, 1975
- Interface Properties of Si-(SiO[sub 2])-Al[sub 2]O[sub 3] StructuresJournal of the Electrochemical Society, 1970
- The Deposition and Physical Properties of Aluminosilicate FilmsJournal of the Electrochemical Society, 1970