Characterization of silicon δ-doped GaAs grown by MBE at various temperatures
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 538-541
- https://doi.org/10.1016/0039-6028(90)90371-e
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Magnetotransport studies of δ-doping layers in MOCVD-grown InPSemiconductor Science and Technology, 1989
- Effect of substrate temperature on migration of Si in planar-doped GaAsApplied Physics Letters, 1988
- Carrier-concentation-dependent electron–LO-phonon coupling observed in GaAs-(Ga,Al)As heterojunctions by resonant-polaron cyclotron resonancePhysical Review B, 1988
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensionsSemiconductor Science and Technology, 1988
- Migration of Si in δ-doped GaAsSemiconductor Science and Technology, 1988
- Experimental and theoretical mobility of electrons in δ-doped GaAsApplied Physics Letters, 1988
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987