Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds
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- 17 February 2005
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (8) , 082105
- https://doi.org/10.1063/1.1868063
Abstract
The effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds was studied. It was found that the substitution of Ti for (Zr,Hf) reduced the thermal conductivity significantly to a low value of at room temperature. In addition, a remarkable enhancement of the Seebeck coefficient due to Ti substitution was observed. Furthermore, doping of the Sn sites in (Ti,Zr,Hf)NiSn with Sb led to a reduction in the electrical resistivity and to a corresponding enhancement of the power factor. In Sb-doped (Ti,Zr,Hf)NiSn compounds, the dimensionless figure of merit, , increased with the increase in temperature and reached a high maximum value of 1.5 at .
Keywords
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